Performance Evaluation of a Memory-Polynomial Model for Microwave Power Amplifiers

Autores/as

  • José Ricardo Cárdenas Valdez Centro de Investigación y Desarrollo de Tecnología Digital, Instituto Politécnico Nacional ; Av. del Parque 1310, Mesa de Otay, C.P. 22150, Tijuana, Baja California, México
  • Mauro Berber Palafox Instituto Tecnológico de Lázaro Cárdenas; Av. Melchor Ocampo No. 2555, Cuarto Sector, Cd. Lázaro Cárdenas Mich. C.P. 60950.
  • Christian Gontrand Université de Lyon, INSA- Lyon, INL, CNRS UMR5270, Villeurbanne, F-69621, France
  • José Cruz Núñez Pérez Centro de Investigación y Desarrollo de Tecnología Digital, Instituto Politécnico Nacional ; Av. del Parque 1310, Mesa de Otay, C.P. 22150, Tijuana, Baja California, México.

DOI:

https://doi.org/10.30973/progmat/2012.4.1/2

Palabras clave:

Memory effects, Memory polynomial model, Periodic signals, Power amplifier, Radio Satellite Link

Resumen

 

This paper is focused on a model for the power amplifier considering the memory effects in short terms, this work was developed for periodic signals through Matlab software and was implemented in Simulink. This model for the power amplifier implements a Memory-Polynomial model. Memory-polynomials prove to be both accurate and easy to implement and was compared with Ghorbani and Saleh quasi- memoryless models to demonstrate its precision.

Biografía del autor/a

José Ricardo Cárdenas Valdez, Centro de Investigación y Desarrollo de Tecnología Digital, Instituto Politécnico Nacional ; Av. del Parque 1310, Mesa de Otay, C.P. 22150, Tijuana, Baja California, México

José Ricardo Cárdenas Valdez was born in Tijuana Baja California, México in October 1, 1982. He received the Enginering degree from the Instituto Tecnológico de Tijuana (ITT) in Baja California, México en 2006 and the MSc degree in Digital Systems from the Centro de Investigación y Desarrollo de Tecnologia Digital (CITEDI) of Intituto Politecnico Nacional (IPN), in Tijuana, México in 2008. He is currently working toward the Ph.D. degree in CITEDI-IPN. His research interests include design and madeling of digital and analog devices mainly Power amplifiers, high frequency devices and the FPGA design. His theme of investigation is based on modeling of power amplifiers based on Volterra Series

Mauro Berber Palafox, Instituto Tecnológico de Lázaro Cárdenas; Av. Melchor Ocampo No. 2555, Cuarto Sector, Cd. Lázaro Cárdenas Mich. C.P. 60950.

Mauro Berber Palafox was born in Lázaro Cárdenas, Michoacán, Mexico, on January 15, 1958. He got a Bachellor´s Degree in Communications and Electronics in 1987 at Escuela Superior de Ingeniería Mecánica y Eléctrica (ESIME-IPN). He worked at Siderúrgica Lázaro Cárdenas (Steel Making Industry), Las Truchas in electronic maintenance areas, in weighing bands, and weighing platforms (150 tons). He was also in charge of radiologic security and updating control equipment in productive plants, from 1982-1994. Nowadays, he has been teaching Introduction to Telecommunications, Analog Electronics II and Electrical Measurements at the Instituto Tecnológico de Lázaro Cárdenas since 1991. He got the degree in Teaching Technical Education in 1997 by the Centro Interdisciplinario de Investigación y Docencia (CIIDET). Currently his research is based on Analysis on Power Amplifier with Memory Models Applied on a Satellite Radiolink. to get his MSc Degree in the Centro de Investigación y Desarrollo de Tecnología Digital (CITEDI-IPN).

Christian Gontrand, Université de Lyon, INSA- Lyon, INL, CNRS UMR5270, Villeurbanne, F-69621, France

Christian Gontrand was born in Montpellier, France, on February 21, 1955. He received his M.S., Ph.D. and “State Doctorat” (Habilitation diploma) degrees, in 1977, 1982, and 1987, in electronics, from the Université des Sciences et Techniques du Languedoc, Montpellier, France. From 1982 to 1984, he has been working with the Thomson “Laboratoire Central de Recherche“ (LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs). From 1988, he joined the laboratoire de Physique de la Matière (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, he had the technical charge of the new “Centre de Micro électronique de la Région Lyonnaise” (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan. From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team “Smart System Integration”, at the “Centre de Génie Electrique de Lyon” (CEGELY); from 2002, his was at the Head of the team “Radiofrequency Devices, Circuits and Systems” of the LPM/INL, dealing with noises or parasitic disturbances in mixed complex 2D and 3D RF circuits and systems.

José Cruz Núñez Pérez, Centro de Investigación y Desarrollo de Tecnología Digital, Instituto Politécnico Nacional ; Av. del Parque 1310, Mesa de Otay, C.P. 22150, Tijuana, Baja California, México.

José Cruz Núñez Pérezwas born in Uruapan Michoacan, Mexico, in April 2, 1978. He received the MSc degree in electronics engineering from the Centro Nacional de Investigación y Desarrollo Tecnológico (CENIDET), in Cuernavaca, Mexico, in 2003, and the PhD degree from the Institut National des Sciences Appliquées de Lyon (INSALyon), Villeurbanne France, in 2007. In first semester 2008, he was a Research Director at Advanced Technology Research S.A. de C.V. (ATR) in Guadalajara, Mexico, where he led a team of researchers working on networking, and telecommunication architectures. Currently, he is a Professor at the Centro de Investigación y Desarrollo de Tecnologia Digital (CITEDI) of Intituto Politecnico Nacional (IPN), in Tijuana, Mexico. He is the Research Coordinator in Telecommunications Department at CITEDIIPN. His research interests include digital and analog circuits design, device physic modeling, Si/SiGe:C heterojunction bipolar transistor, VCO design, oscillator phase noise, high frequency circuits, DSP and FPGA design, circuit and system cosimulation, and electromagnetic compatibility.

Citas

E. Arabi and S. Al, MSc. Thesis: “Behavioral Modeling of RF front end devices in Simulink”. Chalmers University of Technology, Göteborg Sweden, 2008.

X. Wu, .J. Shi, H. Chen, “On the Numerical Stability of RF Power Amplifiers Digital Predistortion,” Proceedings of the 15th AsiaPacific Conference on Communications (APCC 2009)-102. https://doi.org/10.1109/APCC.2009.5375601

H. Ku, and J. S. Kenney, “Behavioral Modeling of Nonlinear RF Power Amplifiers Considering Memory Effects,” IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No 12, December 2003. https://doi.org/10.1109/TMTT.2003.820155

L. Ding. PhD. Thesis: “Digital Predistortion of Power Amplifiers for Wireless Applications,” School of Electrical and Computer Engineering, Georgia Institute of Technology, March 2004.

“Simulink: Simulation and Model-Based Design”. Available On-line:<http://www.mathworks.com/products/simulink>. Access date: September 2011.

A. Zhu, J. C. Pedro and T. J. Brazil, “Dynamic Deviation Reduction-Based Volterra Behavioral Modeling of RF Power Amplifiers,” IEEE Transactions on microwave theory and techniques, Vol. 54, No.12, December 2006. https://doi.org/10.1109/TMTT.2006.883243

Q. Luo, M. Pirola, V. Camarchia, R. Quaglia, R. Tinivella, S. Shen and G. Ghione, “FPGA implementation of adaptive baseband predistortion for FET-based wireless power amplifiers,” The 1st International Conference on Information Science and Engineering (ICISE2009), 2009, pp. 2630-2633. https://doi.org/10.1109/ICISE.2009.604

H. Zhou, G. Wan and L. Chen, “A Nonlinear Memory Power Amplifier Behavior Modeling and Identification Based on Memory Polynomial Model in Soft-defined Shortwave Transmitter,” 6th International Conference on Wireless Communications Networking and Mobile Computing (WiCOM), 23-25 Sept. 2010, pp. 1-4. https://doi.org/10.1109/WICOM.2010.5600848

A.A.M. Saleh, “Frequency-independent and frequency-dependent nonlinear models of TWT amplifiers,” IEEE Transactions on Communications, Vol. COM-29, No. 11, November 1981. https://doi.org/10.1109/TCOM.1981.1094911

A. Ghorbani and M. Sheikhan, “The Effect of Solid State Power Amplifiers (SSPAs) Nonlinearities on MPSK and M-QAM Signal Transmission,” Sixth International Conference on Digital Processing of Signals in Communications, 2-6 September 1991, pp. 193-197.

J. Liebetreu, et al. Title: “Proposed System Impairment Models,” Project IEEE 802.16 Broadband Wireless Access Working Group, Document Number: IEEE 802.16.1 pc-00/15., February 29th 2000.

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Publicado

15-06-2012

Cómo citar

Cárdenas Valdez, J. R., Berber Palafox, M., Gontrand, C., & Núñez Pérez, J. C. (2012). Performance Evaluation of a Memory-Polynomial Model for Microwave Power Amplifiers. Programación matemática Y Software, 4(1), 13–23. https://doi.org/10.30973/progmat/2012.4.1/2

Número

Vol. 4 Núm. 1 (2012): Junio de 2012

Sección

Artículos

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Derechos de autor 2012 Programación Mtatemática y Software

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